详细介绍:
FZ750R65KE3
英飞凌IGBT模块FZ750R65KE3
德国Infineon英飞凌IGBT功率模块FZ750R65KE3
6500V高压IGBT模块FZ750R65KE3
FZ750R65KE3参数:VCES=6500V ;IC=600A
FZ600R65KE3广泛用于机车牵引变流器,高中压变流器
FZ600R65KE3机械特性
碳化硅铝(AlSiC)基板提供更高的温度循环能力
扩大存储温度范围至Tstg=-55°C
封装的CTI>600
加强绝缘封装,10.2kV交流1分钟
高爬电距离和电气间隙
4.5kV, IGBT3 - L3, Single switch
FZ1200R45HL3
for price proj. only
Single switch 1200.0 A IGBT3 - L3 2.65 V 2.5 V
FZ1200R45KL3_B5
in production
Single switch 1200.0 A IGBT3 - L3 2.5 V 2.5 V
FZ800R45KL3_B5
in production
Single switch 800.0 A IGBT3 - L3 2.5 V 2.5 V
4.5kV, Diode
DD1200S45KL3_B5
in production
Diodes 1200.0 A Diode - 2.5 V
DD400S45KL3_B5
in production
Diodes 400.0 A Diode - 2.5 V
6.5kV, IGBT3 - E3, Chopper
FD500R65KE3-K
in production
Chopper 500.0 A IGBT3 - E3 3.0 V 3.0 V
FD250R65KE3-K
in production
Chopper 250.0 A IGBT3 - E3 3.0 V 3.0 V
6.5kV, IGBT3 - E3, Single switch
FZ750R65KE3
in production
Single switch 750.0 A IGBT3 - E3 3.0 V 3.0 V
FZ600R65KE3
in production
Single switch 600.0 A IGBT3 - E3 3.0 V 3.0 V
FZ500R65KE3
in production
Single switch 500.0 A IGBT3 - E3 3.0 V 3.0 V
FZ400R65KE3
in production
Single switch 400.0 A IGBT3 - E3 3.0 V 3.0 V
FZ250R65KE3
in production
Single switch 250.0 A IGBT3 - E3 3.0 V 3.0 V
6.5kV, Diode 北京京诚宏泰科技有限公司销售英飞凌IGBT模块FZ600R65KE3
DD750S65K3
in production
Diodes 750.0 A Diode - 3.0 V
DD600S65K3
in production
Diodes 600.0 A Diode - 3.0 V
DD500S65K3
in production
Diodes 500.0 A Diode - 3.0 V
DD250S65K3
in production
Diodes 250.0 A Diode - 3.0 V
FZ200R65KF2
FZ200R33KF2C
FZ400R65KF2
FZ400R65KE3
FZ500R65KE3
FZ600R65KF2
FZ600R65KE3
FZ750R65KE3
FZ800R33KF2C
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